? semiconductor components industries, llc, 2000 october, 2000 rev. 2 1 publication order number: mur10120e/d mur10120e preferred device scanswitch ? power rectifier for high and very high resolution monitors this stateoftheart power rectifier is specifically designed for use as a damper diode in horizontal deflection circuits for high and very high resolution monitors. ? 1200 volt blocking voltage ? 20 mj avalanche energy (guaranteed) ? 12 volt (typical) peak transient overshoot voltage ? 135 ns (typical) forward recovery time mechanical characteristics: ? case: epoxy, molded ? weight: 1.9 grams (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c max. for 10 seconds ? shipped 50 units per plastic tube ? marking: u10120e maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 1200 v average rectified forward current (rated v r , t c = 125 c) i f(av) 10 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 125 c) per leg i frm 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 100 a operating junction temperature range t j 65 to +125 c controlled avalanche energy w aval 20 mj device package shipping ordering information mur10120e to220 http://onsemi.com to220ac case 221b style 1 50 units/rail 3 4 1 scanswitch rectifier 10 amperes 1200 volts marking diagram u10120e u10120e = device code 1 3 4 preferred devices are recommended choices for future use and best overall value.
mur10120e http://onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance e junction to case r q jc 2.0 c/w electrical characteristics characteristic symbol typ max unit maximum instantaneous forward voltage (note 1.) (i f = 6.5 amps, t j = 125 c) (i f = 6.5 amps, t j = 25 c) v f 1.7 1.9 2.0 2.2 volts maximum instantaneous reverse current (note 1.) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r 25 750 100 1000 m a maximum reverse recovery time (i f = 1.0 a, di/dt = 50 amps/ m s) t rr 150 175 ns maximum forward recovery time i f = 6.5 amps, di/dt = 12 amps/ m s (as measured on a deflection circuit) t fr 135 175 ns peak transient overshoot voltage v rfm 12 14 volts 1. pulse test: pulse width = 300 m s, duty cycle 2.0%. figure 1. typical forward voltage figure 2. typical reverse current figure 3. current derating, case 1.8 0.6 v f , instantaneous voltage (volts) 100 50 5.0 10 3.0 v r , reverse voltage (volts) 0 10 0.1 0.01 t c , case temperature ( c) 105 100 10 3.0 2.0 1.0 0 i f , instantaneous forward current (amps) i i 0.7 0.5 1.2 0.8 1.0 1.4 1.6 200 400 600 800 1000 1.0 100 1000 115 125 2.0 20 0.1 0.3 7.0 1.0 30 , reverse current ( a) r 110 120 1200 1400 1600 1800 2000 , average power dissipation (watts) f(av) 6.0 5.0 4.0 9.0 8.0 7.0 rated v r applied square wave dc 125 c 25 c 85 c 100 c 125 c 25 c 85 c 100 c 70 2.0 0.2
mur10120e http://onsemi.com 3 figure 4. current derating, ambient figure 5. power dissipation 15 45 0 t a , ambient temperature ( c) 8.0 6.0 4.0 2.0 0 i f(av) , average forward current (amps) 1.0 0 15 12 9.0 3.0 0 4.0 30 , average forward current (amps) i f(av) 60 90 75 10 2.0 3.0 5.0 6.0 p f(av) , average power dissipation (watts ) 105 120 150 135 6.0 9.0 7.0 8.0 10 7.0 5.0 3.0 1.0 9.0 t j = 125 c square wave dc r ja = 16 c/w figure 6. typical capacitance v r , reverse voltage (volts) 1.0 500 300 100 0 100 200 c, capacitance (pf) 400 10 t j = 25 c typical capacitance at 0 v = 500 pf
mur10120e http://onsemi.com 4 package dimensions to220 twolead case 221b04 issue d b r j d g l h q t u a k c s 4 13 dim min max min max millimeters inches a 0.595 0.620 15.11 15.75 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.82 d 0.025 0.035 0.64 0.89 f 0.142 0.147 3.61 3.73 g 0.190 0.210 4.83 5.33 h 0.110 0.130 2.79 3.30 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.14 1.52 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.14 1.39 t 0.235 0.255 5.97 6.48 u 0.000 0.050 0.000 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. f style 1: pin 1. cathode 2. n/a 3. anode 4. cathode on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mur10120e/d scanswitch is a trademark of semiconductor components industries, llc. north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland
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